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Simultaneous Time, Wavelength and Intensity Measurement of Optical Memory Subsystems

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Simultaneous Time, Wavelength and Intensity Measurement of Optical Memory Subsystems

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    Available in PDF Format | Simultaneous Time, Wavelength and Intensity Measurement of Optical Memory Subsystems.pdf | Unknown
    Joseph Osman, Rebecca Bussjager
This is a AIR FORCE RESEARCH LAB ROME NY SENSORSDIRECTORATE report procured by the Pentagon and made available for public release. It has been reproduced in the best form available to the Pentagon. It is not spiral-bound, but rather assembled with Velobinding in a soft, white linen cover. The Storming Media report number is A858253. The abstract provided by the Pentagon follows: This study showed that in WO3, there are plenty of defect states available to undergo transitions at 532 nm. We may have to read at a different wavelength further away from the bandgap of WO3 (350 nm). We proved that the 1. 06 um is acting mostly as heat, not as a transition source. We found it may be possible to work the system at the power density level of 650 uW/um2 (532 um) and 520 uWum2 (1.06 um). Although the worst case of our Raman noise experiments showed a 19% standard deviation, this is still a much better signal to noise ratio than any current optical recording read. Our Raman spot size study, in cooperation with STM studies at Bates College, showed: (a) the distribution of Raman scattering centers on the surface of common WO3 is spatially uniform, (b) the density of defects scales as the square of the lateral extent of the observed region as does the topographical surface area and, (c) at the power densities employed and the amount of oxygen substoichiometry employed, there appears to be little cooperativity between the chemistry occurring at different defect centers.  
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